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A Review Of Subthreshold Surface Potential For Single Gate Dual Material Double Halo MOSFET

Swapnadip De, Aditi Kumari, Poulami Dutta, Ishita Gupta, Mainak Bhattacharya

Abstract


An analytical model for the sub thershold surface potential in a short channel MOS transistor is developed by solving a pseudo-2D Poisson’s equation, formulated by applying Gauss’s law around a rectangular box in the channel depletion region. This model uses a physcially based non-uniform depletion layer depth along the channel incorporating the role of channel length (L) and junction depth (xj) , substrate doping (Na), oxide thickness (tox), and bias voltages in determining the surface potential. It is functionally one dimensional but provides a two dimensional accuracy. Using an analytical expression for subthreshold surface potential model of the device is devoloped here. Keywords: Subthreshold surface potential, analytical modelling, Gauss’s law,MOSFET

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References


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