Comparative Study of Surface Potential for Non-Conventional Double Gate MOSFETs

Abstract

The paper portrays a comparative study and analysis of various short channel MOSFETs that have been designed through efficient engineering techniques to negate the undesirable short channel effects that result due to miniaturization of Integrated Circuit Components in the VLSI technology. The various non-conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structures devices considered for the analysis are the Double Gate Dual Material Double Halo (DGDMDH) MOSFET, Double Gate Single Material Double Halo (DGSMDH) MOSFET, Double Gate Dual Material Single Halo (DGDMSH) MOSFET and Double Gate Single Material Single Halo (DGSMSH) MOSFETs. The simulations have been carried out using MATLAB 7.0.1. The variation of surface potential versus channel length has been compared simultaneously for each of these devices. Further, variation in Vds (drain to source voltage), Na (acceptor concentration) and work function have been shown to focus on the effects of engineering techniques, parameter adjustment and biasing conditions to obtain the desired outcome. All these have been done to minimize the adverse effects of channel length reduction. Further research and development in this spectrum may make a major breakthrough in the VLSI technology by tremendously enhancing the integration capacity in circuits by helping designers and engineers choose the appropriate techniques and parameters for designing devices and making successful improvements over the previously existing models.

Keywords: DGDMDH, DGSMDH, DGDMSH, DGSMSH, pseudo 2-D analysis