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High frequency design approach and feasibility study of HBT based W-band (90.0GHz-100.0GHz) amplifier using 130nm SiGe based BiCMOS technology

Shib sankar singh, M.Madhav Kumar, Divya Kumar Garg

Abstract


This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two stage cascode amplifiers at W-band (90.0GHz-100.0GHz). The proposed amplifier has design using 130nm SiGe based BiCMOS technology.  This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection of active device, input and output matching and impacts of passive components have been analyzed for designing of amplifier at W-band frequency range.  The schematic designed two stage amplifier achieved +18.794±2.0dB of small signal gain, better than - 15dB of input return loss and better than    -8.0dB of output return loss in simulation. This amplifier achieved +5.93dBm of linear output power (+1 dB compression output power (P1 dB)) and +8.14dBm of saturated output power in simulation at 95GHz. This amplifier achieved   less than +7% of %THD (Total Harmonic distortion). This schematic design amplifier includes the effect of all pads and bond wires of both stages of amplifier. The total current consumption of two stage amplifier has only 30.0mA with supply voltage of 3.3volt. 

 


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References


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IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp.

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S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S.

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nm CMOS,” in Proc. IEEE Rad. Freq. Integrated Circuits Symp., Jun.

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T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin, “60 and 77

GHz power amplifier in standard 90 nm CMOS,” in IEEE Int. Solid-

State Circuits Conf. Tech. Dig., Feb. 2008, pp. 562–636.

B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad, “Low-

power mm-wave components up to 104 GHz in 90 nm CMOS,”

in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2007, pp.

–201.

E. Laskin, M. Khanpour, R. Aroca, K. W. Tang, P. Garcia, and

S. P. Voinigescu, “95 GHz receiver with fundamental frequency

VCO and static frequency divider in 65 nm digital CMOS,” in

IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp.

–181.

S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S.P. Voinigescu, “A 1.2 V, 140 GHz receiver with on-die antenna in 65

nm CMOS,” in Proc. IEEE Rad. Freq. Integrated Circuits Symp., Jun.

, pp. 239–24

T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin, “60 and 77

GHz power amplifier in standard 90 nm CMOS,” in IEEE Int. Solid-

State Circuits Conf. Tech. Dig., Feb. 2008, pp. 562–636.

B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad, “Low-

power mm-wave components up to 104 GHz in 90 nm CMOS,”

in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2007, pp.

–201.

E. Laskin, M. Khanpour, R. Aroca, K. W. Tang, P. Garcia, and

S. P. Voinigescu, “95 GHz receiver with fundamental frequency

VCO and static frequency divider in 65 nm digital CMOS,” in

IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp.

–181.

S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S.P. Voinigescu, “A 1.2 V, 140 GHz receiver with on-die antenna in 65

nm CMOS,” in Proc. IEEE Rad. Freq. Integrated Circuits Symp., Jun.

, pp. 239–24

T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin, “60 and77

GHz power amplifier in standard 90 nm CMOS,” in IEEE Int. Solid-

State Circuits Conf. Tech. Dig., Feb. 2008, pp. 562–636




DOI: https://doi.org/10.37628/jdcas.v7i2.1658

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